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april 2011 doc id 14639 rev 2 1/12 12 STN4NF06L n-channel 60 v, 0.07 , 4 a sot-223 stripfet? ii power mosfet features exceptional dv /dt capability avalanche rugged technology 100% avalanche tested low threshold drive applications switching application ? automotive description this device is a n-channel stripfet? ii power mosfet that is the latest development of stmicroelectronics unique ?single feature size? strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. figure 1. internal schematic diagram order code v dss r ds(on) max i d STN4NF06L 60 v < 0.1 4 a sot-223 1 2 2 3 !-v $ ' 3 table 1. device summary order code marking package packaging STN4NF06L 4nf06l sot-223 tape and reel www.st.com
contents STN4NF06L 2/12 doc id 14639 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STN4NF06L electrical ratings doc id 14639 rev 2 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v gs gate-source voltage 16 v i d (1) 1. current limited by the package. drain current (continuous) at t c = 25 c 4 a i d drain current (continuous) at t c =100 c 2.9 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 16 a p tot total dissipation at t c = 25 c 3.3 w derating factor 0.026 w/c dv/dt (3) 3. i sd 3 a, di/dt 150 a / s , v dd v (br)dss , t j t jmax. peak diode recovery voltage slope 10 v/ns e as (4) 4. starting t j = 25 c, i d = 4 a, v dd = 30 v. single pulse avalanche energy 200 mj t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit rthj-pcb (1) 1. when mounted on fr-4 board with 1 inch 2 pad, 2 oz. of cu. and t < 10 sec. thermal resistance junction-pcb max. 38 c/w rthj-pcb (2) 2. when mounted on minimum recommended footprint. thermal resistance junction-pcb max. 100 c/w t l (3) 3. for 10 sec. 1.6 mm from case. maximum lead temperature for soldering purpose typ. 260 c
electrical characteristics STN4NF06L 4/12 doc id 14639 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 16 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 12.8v r ds(on) static drain-source on resistance v gs = 10 v, i d = 1.5 a v gs = 5 v, i d = 1.5 a 0.07 0.085 0.10 0.12 table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds = 15 v, i d =1.5 a -3 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs = 0 - 340 63 30 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48 v, i d = 3 a v gs = 5 v (see figure 15) - 7 1.5 2.8 9nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30 v, i d = 1.5 a, r g = 4.7 , v gs = 5 v (see figure 14) - 9 25 - ns ns t d(off) t f turn-off delay time fall time v dd = 30 v, i d = 1.5 a, r g = 4.7 , v gs = 5 v (see figure 14) - 20 10 - ns ns
STN4NF06L electrical characteristics doc id 14639 rev 2 5/12 table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 4a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) 16 a v sd (2) 2. pulsed: pulse duration= 300 s, duty cycle 1.5% forward on voltage i sd = 4 a, v gs =0 -1.5v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4 a, di/dt = 100 a/s, v dd = 25 v, tj= 150 c (see figure 16) - 50 88 3.5 ns nc a
electrical characteristics STN4NF06L 6/12 doc id 14639 rev 2 2.1 electrical characteri stics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain-source on resistance i d 15 10 5 0 0 4 v g s (v) 8 (a) 2 6 20 25 3 0 v d s = 8 v am09065v1 r d s (on) 65 60 55 50 0 2 i d (a) (m ) 1 3 70 75 8 0 8 5 v g s =10v 4 5 90 95 am09066v1
STN4NF06L electrical characteristics doc id 14639 rev 2 7/12 figure 8. gate charge vs. gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs. temperature figure 11. normalized on resistance vs. temperature v g s =10v i d =1.5a figure 12. source-drain diode forward characteristics figure 13. normalized b reakdown voltage vs. temperature v s d 0 4 i s d (a) (v) 2 6 8 0 0.2 0.4 0.6 0. 8 1.0 t j =-40c t j =150c t j =25c am09067v1
test circuit STN4NF06L 8/12 doc id 14639 rev 2 3 test circuit figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive wavefo rm figure 19. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STN4NF06L package mechanical data doc id 14639 rev 2 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STN4NF06L 10/12 doc id 14639 rev 2 figure 20. sot-223 mechanical data drawing table 8. sot-223 mechanical data dim. mm min. typ. max. a 2.27 2.3 2.33 b 4.57 4.6 4.63 c0.20.40.6 d 0.63 0.65 0.67 e1 1.5 1.6 1.7 e4 0.32 f2.933.1 g 0.67 0.7 0.73 l1 6.7 7 7.3 l2 3.5 3.5 3.7 l6.36.56.7 c c b e l a b e1 l1 f g c d l2 e4 p00 8 b
STN4NF06L revision history doc id 14639 rev 2 11/12 5 revision history table 9. document revision history date revision changes 22-apr-2008 1 initial version. 29-apr-2011 2 figure 5 , figure 7 , figure 11 and figure 12 have been updated.
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